Some of the processes involved in the nucleation and growth of thin films were simulated by means of a digital computer. The simulation results were used to study the nucleation and growth kinetics resulting from the various processes. Kinetic results obtained for impingement, surface migration, impingement combined with surface migration, and with reevaporation are presented. A substantial fraction of the clusters may form directly upon impingement. Surface migration results in a decrease in cluster density, and reevaporation of atoms from the surface causes a further reduction in cluster density.